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SiC器件对并网逆变电源EMC特性和效率的影响大吗

文章来源:稳压电源公司,时间:2019-02-27 11:14    点击量:

宽禁带器件SiC MOSFET在并网逆变电源邻域已经取得了越来越多的关注。首先,讨论了SiC MOSFET三相并网逆变电源EMC模型的建立,并通过分析噪声源的模型进行等效替代,结合逆变电源损耗对于噪声传导路径的阻尼作用,得到了SiC逆变电源的EMC仿真模型和理论模型;然后,通过逆变电源平台实验的结果与仿真模型和理论模型的结果进行了对比,验证了模型的可行性;最后,通过实验比较了沟道栅SiC逆变电源、平面栅SiC逆变电源和SiIGBT逆变电源3者在相同开关频率下的传导干扰和不同开关频率下的满载效率。
 
英文摘要:
In recent years, wide band gap device SiC MOSFET have attracted more andmore attention from the field of grid-connected inverter. In this paper, theconstruction of an EMC model of a grid-connected three-phase SiC MOSFETinverter is discussed at first. Through the analysis of a noise source model,the equivalent substitution is performed. By combining the damping effect ofthe inverter's power loss on the transmission path of noise, both thesimulation and theoretical EMC models of the SiC inverter are derived. Then,experimental results on the inverter platform were compared with those of thesimulation and theoretical models, which verified the feasibility of theproposed model. Finally, the conducted interference at the same switchingfrequency and the rated power efficiency at different switching frequencieswere experimentally compared among a trench SiC inverter, a planar SiCinverter, and a Si IGBT inverter.
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